AlN and AlGaN by MOVPE for UV light emitting devices

被引：0
|
作者：
Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan [1 ]
机构：
来源：
Mater Sci Forum | 2008年 / 175-210期
关键词：
Light emitting diodes - Metallorganic vapor phase epitaxy - Sapphire - Silicon carbide - Wide band gap semiconductors - Aluminum gallium nitride - III-V semiconductors - Light emission - Semiconductor alloys - Hole concentration;
D O I：
10.4028/www.scientific.net/msf.590.175
中图分类号：
学科分类号：
摘要：
The fundamental growth issues of AlN and AlGaN on sapphire and SiC using metalorganic vapor phase epitaxy, particularly the growth of AlN and AlGaN on a groove-patterned template are reviewed. In addition, the conductivity control of AlGaN is shown. The conductivity control of p-type AlGaN, particularly the realization of a high hole concentration, is essential for realizing high-efficiency UV and DUV LEDs and LDs.
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