White OLEDs with efficient hole injection layer MoO3and high-mobility electron transport layer

被引：0

作者：

Ma, Jun-Wei ^{[1
]}

Zhang, Liang ^{[1
]}

Cao, Jin ^{[1
,2
]}

Jiang, Xue-Yin ^{[1
]}

Zhang, Zhi-Lin ^{[1
,2
]}

机构：

[1] Department of Materials Science, Shanghai University, Shanghai 201800, China

[2] Key Laboratory of Advanced Display and System Applications, Shanghai University, Shanghai 200072, China

来源：

Guangdianzi Jiguang/Journal of Optoelectronics Laser | 2009年 / 20卷 / 03期

关键词：

Hole mobility - Electron transport properties - Electron injection - Efficiency - Organic light emitting diodes (OLED) - Charge injection;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

White OLEDs with hole injection layer [(MoO3or m-MTDATA)], and electron transport layer (Alq3or Bphen) are prapared. With 9, 10-bis (2-naphthyl)-2-t-butylanthracene (TBADN) doped with 3% P-bis (P-N, N-diphenyl-aminostyryl) benzene (DSA-ph) and 0.05% 4-(dicyanomethylene)-2-t-butyl-6-(1, 1, 7, 7,-tetramethyl-julolidy-9-enyl)-4H-pyran (DCJTB) as white emitting layer, The results the MoO3//Bphen based devices have the lowest driving voltage and highest power efficiency. At the current density of 20 mA/cm2, the driving voltage and power efficiency are 5.43 V and 4.54 lm/W respectively, which is respectively reduced 40% and improved 57% comparing with those of the m-MTDATA//Alq3based one significance in OLED performances.

引用

页码：308 / 312