Thickness dependence of structural and electrical properties of thin InN grown by radio-frequency plasma-assisted molecular beam epitaxy

被引：0

作者：

Sakaguchi, Junichi ^{[1
]}

Araki, Tsutomu ^{[1
]}

Fujishima, Tatsuya ^{[2
]}

Matioli, Elison ^{[2
]}

Palacios, Tomas ^{[2
]}

Nanishi, Yasushi ^{[1
,3
]}

机构：

[1] Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan

[2] Massachusetts Institute of Technology, Cambridge, MA 02139, United States

[3] Seoul National University, Seoul 151-744, Korea, Republic of

来源：

Japanese Journal of Applied Physics | 2013年 / 52卷 / 8 PART 2期

关键词：

Crystal qualities - GaN/sapphire - High quality - Plasma power - Radio-frequency plasma-assisted molecular-beam epitaxies - Structural and electrical properties - Thickness dependence - X ray rocking curve;

D O I：

08JD06

中图分类号：

学科分类号：

摘要：

引用