Synthesis of ultrathin carbon films by direct current filtered cathodic vacuum arc

被引：0

作者：

Zhang, H.-S. ^{[1
]}

Komvopoulos, K. ^{[1
]}

机构：

[1] Department of Mechanical Engineering, University of California, Berkeley, CA 94720, United States

来源：

Journal of Applied Physics | 2009年 / 105卷 / 08期

关键词：

Filtered cathodic vacuum arc was used to synthesize ultrathin carbon films on silicon substrates. The depth profiles; near-surface chemical composition; fractions of tetrahedral (sp3) and trigonal (sp2) carbon atom hybridizations; roughness; and hardness of the carbon films were determined from Monte Carlo (T-DYN) simulations and x-ray reflectivity (XRR); x-ray photoelectron spectroscopy (XPS); atomic force microscopy (AFM); and surface force microscopy (SFM) measurements; respectively. Films of thickness of only a few nanometers possessed smaller sp3 fractions than much thicker films. The effective hardness was found to depend on the sp3 fraction and silicon-carbon composition profile. The formation of different carbon atom bonds; film growth mechanisms; and optimum process conditions for synthesizing ultrathin carbon films are interpreted in the context of T-DYN; XRR; XPS; AFM; and SFM results and surface bombardment; adsorption; and diffusion mechanisms. © 2009 American Institute of Physics;

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摘要：

Journal article (JA)

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