Radio-frequency influences on Cu film deposited by unbalanced magnetron sputtering

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State Key Lab. of Materials Modification by Laser, Electron and Ion Beams, Dalian University of Technology, Dalian 116024, China ^{[1
]}

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来源：

Hejubian Yu Dengliziti Wuli/Nuclear Fusion and Plasma Physics | 2007年 / 27卷 / 03期

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摘要：

Metallic copper films are deposited on Si100 substrate by radio-frequency plasma enhanced unbalanced magnetron sputtering, and film performance is studied by changing deposition parameters such as bias voltage, rf power and magnetron. The morphology, structure and element of the films are examined by scanning electron microscopy, atomic force microscope (AFM), X-ray diffraction (XRD) and electron spectroscopy (EM). The results show that rf discharge has advantages in depositing equality smooth and high conductivity Cu film and deposition parameters are important for film performance.

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页码：264 / 268