P-type doping of MoS2 thin films using Nb

被引：214

作者：

Laskar, Masihhur R. ^{[1
]}

Nath, Digbijoy N. ^{[1
]}

Ma, Lu ^{[2
]}

Lee II, Edwin W. ^{[1
]}

Lee, Choong Hee ^{[1
]}

Kent, Thomas ^{[3
]}

Yang, Zihao ^{[1
]}

Mishra, Rohan ^{[4
,5
]}

Roldan, Manuel A. ^{[5
,6
]}

Idrobo, Juan-Carlos ^{[7
]}

Pantelides, Sokrates T. ^{[4
,5
,8
]}

Pennycook, Stephen J. ^{[9
]}

Myers, Roberto C. ^{[1
,3
]}

Wu, Yiying ^{[2
]}

Rajan, Siddharth ^{[1
,3
]}

机构：

[1] Department of Electrical and Computer Engineering, Ohio State University, Columbus

[2] Department of Chemistry, Ohio State University, Columbus

[3] Department of Material Science and Engineering, Ohio State University, Columbus

[4] Department of Physics and Astronomy, Vanderbilt University, Nashville

[5] Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge

[6] Department Fisica Aplicada III, Universidad Complutense de Madrid

[7] Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge

[8] Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville

[9] Department of Materials Science and Engineering, University of Tennessee, Knoxville

来源：

Applied Physics Letters | 2014年 / 104卷 / 09期

基金：

美国国家科学基金会;

关键词：

Molybdenum compounds;

D O I：

10.1063/1.4867197

中图分类号：

学科分类号：

摘要：

We report on the first demonstration of p-type doping in large area few-layer films of (0001)-oriented chemical vapor deposited MoS2. Niobium was found to act as an efficient acceptor up to relatively high density in MoS2 films. For a hole density of 3.1 × 1020 cm-3, Hall mobility of 8.5 cm2 V-1 s -1 was determined, which matches well with the theoretically expected values. X-ray diffraction scans and Raman characterization indicated that the film had good out-of-plane crystalline quality. Absorption measurements showed that the doped sample had similar characteristics to high-quality undoped samples, with a clear absorption edge at 1.8 eV. Scanning transmission electron microscope imaging showed ordered crystalline nature of the Nb-doped MoS 2 layers stacked in the [0001] direction. This demonstration of substitutional p-doping in large area epitaxial MoS2 could help in realizing a wide variety of electrical and opto-electronic devices based on layered metal dichalcogenides. © 2014 AIP Publishing LLC.

引用

共 26 条

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