Influence of annealing temperature and β-FeSi2layer thickness on the n-type β-FeSi2/p-type Si heterojunction solar cells

被引：0
|
作者：
Yu, Cao [1 ]
Hou, Guo-Fu [1 ]
Liu, Fang [2 ]
Sun, Jian [1 ]
Zhao, Ying [1 ]
Geng, Xin-Hua [1 ]
机构：
[1] Institute of Photo-electronics, Nankai University, Tianjin 300071, China
[2] School of Information Engineering, Hebei University of Technology, Tianjin 300401, China
来源：
Rengong Jingti Xuebao/Journal of Synthetic Crystals | 2009年 / 38卷 / 03期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：662 / 665
相关论文
共 50 条
  • [1] Low-temperature annealing of n-type β-FeSi2/p-type si heterojunctions
    Shaban, Mahmoud
    Nomoto, Keita
    Nakashima, Kazuhiro
    Yoshitake, Tsuyoshi
    Japanese Journal of Applied Physics, 2008, 47 (5 PART 1): : 3444 - 3446
  • [2] Low-Temperature Annealing of n-Type β-FeSi2/p-Type Si Heterojunctions
    Shaban, Mahmoud
    Nomoto, Keita
    Nakashima, Kazuhiro
    Yoshitake, Tsuyoshi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (05) : 3444 - 3446
  • [3] Necessity of Epitaxial Growth of β-FeSi2 Thin Films in Formation of n-Type β-FeSi2/p-Type Si Heterojunction Photodiodes
    Iwasaki, R.
    Promros, N.
    Yamashita, K.
    Izumi, S.
    Funasaki, S.
    Shaban, M.
    Yoshitake, T.
    LOW-DIMENSIONAL NANOSCALE ELECTRONIC AND PHOTONIC DEVICES 5 -AND- STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS 54 (SOTAPOCS 54), 2012, 50 (06): : 157 - 162
  • [4] Photovoltaic properties of n-type β-FeSi2/p-type Si heterojunctions
    Shaban, Mahmoud
    Nakashima, Kazuhiro
    Yokoyama, Wataru
    Yoshitake, Tsuyoshi
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (25-28): : L667 - L669
  • [5] Characterization of near-infrared n-type β-FeSi2/p-type Si heterojunction photodiodes at room temperature
    Shaban, Mahmoud
    Nomoto, Keita
    Izumi, Shota
    Yoshitake, Tsuyoshi
    APPLIED PHYSICS LETTERS, 2009, 94 (22)
  • [6] n-Type Nanocrystalline-FeSi2/p-Type Si Heterojunction Photodiodes Prepared at Room Temperature
    Shaban, Mahmoud
    Kawai, Kenji
    Promros, Nathaporn
    Yoshitake, Tsuyoshi
    IEEE ELECTRON DEVICE LETTERS, 2010, 31 (12) : 1428 - 1430
  • [7] n-type β-FeSi2/intrinsic-Si/p-type Si heterojunction photodiodes for near-infrared light detection at room temperature
    Shaban, Mahmoud
    Izumi, Shota
    Nomoto, Keita
    Yoshitake, Tsuyoshi
    APPLIED PHYSICS LETTERS, 2009, 95 (16)
  • [8] Near-Infrared Photodetection in n-Type Nanocrystalline FeSi2/p-Type Si Heterojunctions
    Promros, Nathaporn
    Chen, Li
    Yoshitake, Tsuyoshi
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2013, 13 (05) : 3577 - 3581
  • [9] Effects of Hydrogen Passivation on Near-Infrared Photodetection of n-Type β-FeSi2/p-Type Si Heterojunction Photodiodes
    Promros, Nathaporn
    Yamashita, Kyohei
    Iwasaki, Ryu Hei
    Yoshitake, Tsuyoshi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (10)
  • [10] Effect of Cu addition on the thermoelectric properties of n-type and p-type β-FeSi2
    Nagai, Hiroshi
    Nakayama, Shogo
    Kobayashi, Hideaki
    Katsuyama, Shigeru
    Majima, Kazuhiko
    Funtai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy, 1995, 42 (11):
12345