Electrical characteristics of low-temperature polycrystalline silicon complementary metal-oxide-semiconductor thin-film transistors with six-step photomask structure

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LG Display R and D Center, Paju, Gyeonggi 413-811, Korea, Republic of ^{[1
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Jpn. J. Appl. Phys. | / 6 PART 1卷

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摘要：

MOS devices - Temperature - CMOS integrated circuits - Metallic compounds - Metals - Charge transfer - Polycrystalline materials - Dielectric devices - Polysilicon - Thin films - Silicon compounds - Thin film circuits - Thin film transistors

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