Optimizing the diamond wire sawing of polycrystalline silicon: An experimental approach

被引:0
作者
Costa, Erick Cardoso [1 ,2 ]
van Bellen, Bruno [2 ]
Werner, Marcos Odivan [2 ]
de Sousa, Pedro Cordula [2 ]
Xavier, Fabio Antonio [2 ]
机构
[1] Univ Fed Santa Catarina, Dept Engn Mobilidade, Lab Manufatura Auxiliada Comp, Joinville, SC, Brazil
[2] Univ Fed Santa Catarina, Dept Engn Mecan, Lab Mecan Precisao, Florianopolis, SC, Brazil
关键词
Wire sawing; Silicon wafer; Optimization; Regression model; Photovoltaic; CUTTING PARAMETERS; SURFACE-ROUGHNESS; OPTIMIZATION; POLYSILICON; BEHAVIOR; WAFERS; DAMAGE; SAWN;
D O I
10.1016/j.mssp.2024.108938
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This study aims to determine the optimized cutting conditions for diamond wire sawing of polycrystalline silicon (poly-Si) wafers using a laboratory machine-tool that employs continuous cutting movement and reach cutting conditions similar to those in the industry. The experimental cutting was carried out following a central composite design, varying the wire cutting speed (v(c)) and feed rate (v(f)). A response surface methodology was employed to find the optimized cutting conditions for minimum surface roughness and subsurface micro-crack depth of the as-sawn poly-Si wafer. The results showed that the as-sawn poly-Si exhibited ductile scratches and fragile fractures in its surface morphology, with high v(c) and low v(f) resulting in a smooth surface. The response surfaces indicated that increasing v(f) led to increased R-a and R-q values, while increasing v(c) reduced them. Median micro-cracks were slightly inclined in the subsurface region, with the response surface indicating that their depth reduced with increasing v(c) and decreasing v(f). The v(f)/v(c) ratio significantly affected surface integrity, with a lower v(f)/v(c) ratio being more suitable for reaching a smoother surface and shallower subsurface damage. The following material removal mechanisms was identified: optimal ductile region, ductile-to-brittle transition, brittle-ductile mixture region, and brittle region. Simulations using the response surface models indicated minimum values of R-a = 0.35 mu m, R-q = 0.48 mu m and SSD = 3.29 mu m. Thus, this study provides a processing parameter window for diamond wire sawing of poly-Si wafers, which could be useful for both the photovoltaic and microelectronic industries.
引用
收藏
页数:11
相关论文
共 47 条
  • [1] Barcelos M.C.S., 2023, 27 INT C MECH ENG, P1, DOI [10.26678/abcm.cobem2023.cob2023-2055, DOI 10.26678/ABCM.COBEM2023.COB2023-2055]
  • [2] Role of a thin interfacial oxide layer and optimized electrodes in improving the design of a Graphene/n-Si MSM photodetector
    Bencherif, H.
    Dehimi, L.
    Faggio, G.
    Messina, G.
    Pezzimenti, F.
    Meddour, F.
    Abdi, M. A.
    Della Corte, F. G.
    [J]. MICRO AND NANOSTRUCTURES, 2022, 164
  • [3] Bencherif H, 2018, PROCEEDINGS OF THE 2018 INTERNATIONAL CONFERENCE ON APPLIED SMART SYSTEMS (ICASS)
  • [4] Bernreuter Research, Polysilicon Price Trend
  • [5] On the mechanical behavior of the sintered Nd-Fe-B permanent magnet during diamond scratching
    Costa, Erick Cardoso
    Lima, Arnaldo Oliveira
    dos Santos, Marcionila Neli Lima
    Souza, Roberto Martins
    Wendhausen, Paulo Antonio Pereira
    Xavier, Fabio Antonio
    [J]. JOURNAL OF MANUFACTURING PROCESSES, 2023, 94 : 79 - 93
  • [6] Study on surface integrity and ductile cutting of PV polycrystalline silicon and wear mechanisms of electroplated diamond wire
    Costa, Erick Cardoso
    dos Santos, Caroline Piesanti
    Carvalho, Vinicius Almeida
    Xavier, Fabio Antonio
    [J]. INTERNATIONAL JOURNAL OF ADVANCED MANUFACTURING TECHNOLOGY, 2022, 122 (3-4) : 1539 - 1553
  • [7] Influence of single diamond wire sawing of photovoltaic monocrystalline silicon on the feed force, surface roughness and micro-crack depth
    Costa, Erick Cardoso
    Weingaertner, Walter Lindolfo
    Xavier, Fabio Antonio
    [J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2022, 143
  • [8] Effect of cutting parameters on surface integrity of monocrystalline silicon sawn with an endless diamond wire saw
    Costa, Erick Cardoso
    Xavier, Fabio Antonio
    Knoblauch, Ricardo
    Binder, Cristiano
    Weingaertner, Walter Lindolfo
    [J]. SOLAR ENERGY, 2020, 207 : 640 - 650
  • [9] Costa EC, 2020, MATER RES-IBERO-AM J, V23, DOI [10.1590/1980-5373-MR-2020-0013, 10.1590/1980-5373-mr-2020-0013]
  • [10] de Sousa PC, 2024, 27 ABCM INT C FO MEC, P1, DOI [10.26678/abcm.cobem2023.cob2023-1780, DOI 10.26678/ABCM.COBEM2023.COB2023-1780]