Cathodoluminescent and electrical properties of an individual ZnO nanowire with oxygen vacancies

被引:16
作者
Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China [1 ]
机构
[1] Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
来源
Chin. Phys. | 2008年 / 9卷 / 3444-3447期
关键词
Electrical transport; Oxygen vacancies; Weak localization; ZnO nanowire;
D O I
10.1088/1674-1056/17/9/050
中图分类号
学科分类号
摘要
A single ZnO nanowire with intrinsic oxygen vacancies is utilized to fabricate four-contact device with focus ion beam lithography technique. Cathodoluminescent spectra indicate strong near-UV and green emission at both room temperature and low temperatures. Experimental measurement shows the temperature-dependent conductivity of the ZnO nanowire at low temperatures (below 100 K). The further theoretical analysis confirms that weak localization plays an important role in the electrical transport, which is attributed to the surface states induced by plenty of oxygen vacancies in ZnO nanowire. © 2008 Chin. Phys. Soc. and IOP Publishing Ltd.
引用
收藏
页码:3444 / 3447
页数:3
相关论文
共 40 条
  • [1] Wang X.D., Song J.H., Liu J., Wang Z.L., Science, 316, 5821, (2007)
  • [2] Liao L., Liu K.H., Wang W.L., Bai X.D., Wang E.G., Liu Y.L., Li J.C., Liu C., J. Am. Chem. Soc., 129, 31, (2007)
  • [3] Gao H.J., Sohlberg K., Xue Z.Q., Chen H.Y., Hou S.M., Ma L.P., Fang X.W., Pang S.J., Pennycook S.J., Phys. Rev. Lett., 84, 8, (2000)
  • [4] Ma L.P., Song Y.L., Gao H.J., Zhao W.B., Chen H.Y., Xue Z.Q., Pang S.J., Appl. Phys. Lett., 69, 24, (1996)
  • [5] Gao H.J., Xue Z.Q., Wang K.Z., Wu Q.D., Pang S.J., Appl. Phys. Lett., 68, 16, (1996)
  • [6] Feng M., Gao L., Deng Z.T., Ji W., Guo X.F., Du S.X., Shi D.X., Zhang D.Q., Zhu D.B., Gao H.J., J. Am. Chem. Soc., 129, 8, (2007)
  • [7] He S., Yao J., Jiang P., Shi D.X., Zhang H., Xie S.S., Pang S.J., Gao H.J., Langmuir, 17, (2001)
  • [8] Wang X.J., Tian J.F., Yang T.Z., Bao L.H., Hui C., Liu F., Shen C.M., Gu C.Z., Xu N.S., Gao H.J., Adv. Mater., 19, 24, (2007)
  • [9] Liu F., Tian J.F., Bao L.H., Yang T.Z., Shen C.M., Xu N.S., Gao H.J., Adv. Mater., 9999, (2008)
  • [10] Shi D.X., Ji W., Lin X., He X.B., Lian J.C., Gao L., Cai J.M., Lin H., Du S.X., Lin F., Seidel C., Chi L.F., Hofer W.A., Fuchs H., Gao H.J., Phys. Rev. Lett., 96, 22, (2006)