Experimental study of floating-gate-type metal-oxide-semiconductor capacitors with nanosize triangular cross-sectional tunnel areas for low operating voltage flash memory application

被引：0

作者：

Liu, Yongxun ^{[1
]}

Guo, Ruofeng ^{[1
]}

Kamei, Takahiro ^{[2
]}

Matsukawa, Takashi ^{[1
]}

Endo, Kazuhiko ^{[1
]}

O'Uchi, Shinichi ^{[1
]}

Tsukada, Junichi ^{[1
]}

Yamauchi, Hiromi ^{[1
]}

Ishikawa, Yuki ^{[1
]}

Hayashida, Tetsuro ^{[2
]}

Sakamoto, Kunihiro ^{[1
]}

Ogura, Atsushi ^{[2
]}

Masahara, Meishoku ^{[1
,2
]}

机构：

[1] National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan

[2] School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan

来源：

关键词：

Compendex;

D O I：

06FF01

中图分类号：

学科分类号：

摘要：

Silica

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