Influence of Contact Resistance on Effective Mobility in Organic Thin Film Transistor

被引：1

作者：

Li, Ling ^{[1
]}

Heremans, Paul ^{[2
]}

Jang, Jin ^{[1
]}

机构：

[1] Kyung Hee Univ, Informat Display Dept, Seoul 130701, South Korea

[2] IMEC, B-3001 Louvain, Belgium

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 02期

关键词：

Compendex;

D O I：

10.1143/JJAP.50.021602

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the charge transport in organic thin film transistors based on the variable range hopping theory, including the contribution of contact resistance. The impact of contact resistance on the temperature dependence of the extracted mobility is extensively analyzed. It was found that contact resistance is responsible for the experimentally observed no-Arrhenius behavior of charge transport in organic transistors in the low temperature region. The developed model quantitatively explains the temperature dependence of mobility observed in conjugated polymer thin film transistor. (C) 2011 The Japan Society of Applied Physics

引用

页数：3