Reversible change in electrical and optical properties in epitaxially grown Al-doped ZnO thin films

被引：0
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作者：
Noh, Jun Hong [1 ]
Jung, Hyun Suk [2 ]
Lee, Jung-Kun [3 ]
Kim, Jin Young [4 ]
Cho, Chin Moo [1 ]
An, Jae-Sul [1 ]
Hong, Kug Sun [1 ]
机构：
[1] Department of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea, Republic of
[2] School of Advanced Materials Engineering, Kookmin University, Jeongneung-dong, Seongbuk-gu, Seoul 136-702, Korea, Republic of
[3] Department of Mechanical Engineering and Materials Science, University of Pittsburgh, Pittsburgh, Philadelpia, 15260, United States
[4] Chemical and Biosciences Center, National Renewable Energy Laboratory, Golden, CO 80401, United States
来源：
Journal of Applied Physics | 2008年 / 104卷 / 07期
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