Influence of GaN buffer layer for InN growth

被引：0

作者：

Liu, Bin ^{[1
]}

Zhang, Rong ^{[1
]}

Xie, Zili ^{[1
]}

Xiu, Xiangqian ^{[1
]}

Li, Liang ^{[1
]}

Liu, Chengxiang ^{[1
]}

Han, Ping ^{[1
]}

Zheng, Youdou ^{[1
]}

机构：

[1] Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093, China

来源：

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2006年 / 27卷 / SUPPL.期

关键词：

11;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：101 / 104

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