Influence of GaN buffer layer for InN growth

被引：0
|
作者：
Liu, Bin [1 ]
Zhang, Rong [1 ]
Xie, Zili [1 ]
Xiu, Xiangqian [1 ]
Li, Liang [1 ]
Liu, Chengxiang [1 ]
Han, Ping [1 ]
Zheng, Youdou [1 ]
机构：
[1] Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2006年 / 27卷 / SUPPL.期
关键词：
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页码：101 / 104
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