Influences of preparation techniques on the microstructure and electric characteristics of p-ZnO thin films

被引：0

作者：

Ding, Rui-Qin ^{[1
]}

Chen, Yi-Zhan ^{[1
]}

Zhu, Hui-Qun ^{[1
]}

Li, Yang-Gang ^{[1
]}

Ding, Xiao-Gui ^{[2
]}

Yang, Liu ^{[3
]}

Huang, Xin-Dian ^{[3
]}

Qi, De-Bei ^{[4
]}

Tan, Jun ^{[3
]}

机构：

[1] Institute of Thin Films and Nano-Materials, Wuyi University, Jiangmen 529020, China

[2] Department of Mathematics and Physics, Wuyi University, Jiangmen 529020, China

[3] Information College, Wuyi University, Jiangmen 529020, China

[4] Department of Mechanics and Electricity, Wuyi University, Jiangmen 529020, China

来源：

Rengong Jingti Xuebao/Journal of Synthetic Crystals | 2008年 / 37卷 / 05期

关键词：

Film preparation - II-VI semiconductors - Metallic films - Optical films - Thin films - Zinc oxide;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Techniques including magnetron sputtering, annealing, and cooling for preparing p-ZnO thin films by phosphorus diffusion and their influence on the microstructure and electric characteristics of the films have been studied in this article. Results of the research reveal that the morphology, crystallinity and electric characteristics of the p-ZnO films have close relations to the preparation techniques of the films. Mechanisms of the relations have been discussed and analyzed.

引用

页码：1237 / 1241