Long-term stabilization of sprayed zinc oxide thin film transistors by hexafluoropropylene oxide self assembled monolayers

被引：0
作者：
机构：
[1] Ortel, Marlis
[2] Kalinovich, Nataliya
[3] Röschenthaler, Gerd-Volker
[4] Wagner, Veit
来源：
Wagner, V. (v.wagner@jacobs-university.de) | 1600年 / American Institute of Physics Inc.卷 / 114期
关键词：
Surface functionalization of solution processed zinc oxide layers was studied in transistors with bottom-gate bottom-contact configuration aiming at suppression of trapping processes to increase device stability. Saturation of electrically active surface sites and formation of a moisture barrier to decrease the impact of humid atmosphere was successfully shown by binding hexafluoropropylene oxide (HFPO) on the metal oxide semiconductor. Deep trap level related electrical parameters; i.e; stability; hysteresis; and on-set voltage; improved rapidly within 60 s of exposure which was attributed to occupation of sites characterized by low adsorption energies; e.g; at edges. In contrast; shallow trap level related parameters; mobility; showed a much slower process of improvement. Identical behavior was determined for the contact angle. A physical model is presented by applying first order reaction kinetics equation to Young's law and multiple trapping and release model which relates the dependence of the contact angle and the mobility to the hexafluoropropylene oxide deposition time. Consistent time constants of τ = 1 min; 2; min; and 250 min were extracted for mobility and contact angle which implies a direct dependence on the surface coverage. Mobility decreased at short deposition times; recovered at medium deposition times and improved strongly by 2.4 cm 2 V-1 s-1 for long deposition times of 1400 min. A microscopic model of these phenomena is given with interpretation of the different time constants found in the experiment. © 2013 AIP Publishing LLC;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [31] Surface-Functionalized Interfacial Self-Assembled Monolayers as Copper Electrode Diffusion Barriers for Oxide Semiconductor Thin-Film Transistor
    Lee, Sung-Eun
    Park, Jintaek
    Lee, Junhee
    Lee, Eun Goo
    Im, Changik
    Na, Hyunjae
    Cho, Nam-Kwang
    Lim, Keon-Hee
    Kim, Youn Sang
    ACS APPLIED ELECTRONIC MATERIALS, 2019, 1 (03) : 430 - 436
  • [32] Room Temperature Hydrogen Sensing Investigation of Zinc Oxide Schottky Thin-Film Transistors: Dependence on Film Thickness
    Ghosh, Sukanya
    Rajan, Lintu
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (12) : 5701 - 5709
  • [33] Effects of Choline Chloride, Copper Sulfate and Zinc Oxide on Long-Term Stabilization of Microencapsulated Vitamins in Premixes for Weanling Piglets
    Yang, Pan
    Wang, Huakai
    Zhu, Min
    Ma, Yongxi
    ANIMALS, 2019, 9 (12):
  • [34] Effect of substrate temperature on sputtered indium-aluminum-zinc oxide films and thin film transistors
    Xu, Weidong
    Jiang, Jianfeng
    Xu, Sanjin
    Zhang, Yu
    Xu, Huayong
    Han, Lin
    Feng, Xianjin
    JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 791 : 773 - 778
  • [35] Investigation on the electrical properties of amorphous Indium-Zinc-Titanium-Aluminum Oxide thin film transistors
    Jia, Lanchao
    Su, Jinbao
    Liu, Depeng
    Yang, Hui
    Li, Ran
    Ma, Yaobin
    Yi, Lixin
    Zhang, Xiqing
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2020, 106
  • [36] Performance improvement for printed indium gallium zinc oxide thin-film transistors with a preheating process
    Xie, Meilan
    Wu, Shaojing
    Chen, Zheng
    Khan, Qasim
    Wu, Xinzhou
    Shao, Shuangshuang
    Cui, Zheng
    RSC ADVANCES, 2016, 6 (47) : 41439 - 41446
  • [37] Effects of Hf incorporation on indium zinc oxide thin-film transistors using solution process
    Xifeng Li
    Enlong Xin
    Jianhua Zhang
    Electronic Materials Letters, 2015, 11 : 143 - 148
  • [38] Effects of Hf Incorporation on Indium Zinc Oxide Thin-Film Transistors using Solution Process
    Li, Xifeng
    Xin, Enlong
    Zhang, Jianhua
    ELECTRONIC MATERIALS LETTERS, 2015, 11 (01) : 143 - 148
  • [39] Current Stress Induced Electrical Instability in Transparent Zinc Tin Oxide Thin-Film Transistors
    Cheong, Woo-Seok
    Shin, Jae-Heon
    Chung, Sung Mook
    Hwang, Chi-Sun
    Lee, Jeong-Min
    Lee, Jong-Ho
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2012, 12 (04) : 3421 - 3424
  • [40] Environmentally Stable, Solution-Processed Indium Boron Zinc Oxide Thin-Film Transistors
    Arulkumar, S.
    Parthiban, S.
    Dharmalingam, G.
    Salim, Bindu
    Kwon, J. Y.
    JOURNAL OF ELECTRONIC MATERIALS, 2020, 49 (09) : 5606 - 5612
12345