Dynamically corrected gates in silicon singlet-triplet spin qubits

被引:0
|
作者
Walelign, Habitamu Y. [1 ]
Cai, Xinxin [1 ]
Li, Bikun [2 ,3 ]
Barnes, Edwin [2 ,4 ]
Nichol, John M. [1 ]
机构
[1] Department of Physics and Astronomy, University of Rochester, Rochester,NY,14627, United States
[2] Department of Physics, Virginia Tech, Blacksburg,VA,24061, United States
[3] Pritzker School of Molecular Engineering, The University of Chicago, Chicago,IL,60637, United States
[4] Virginia Tech, Center for Quantum Information Science and Engineering, Blacksburg,VA,24061, United States
基金
美国国家科学基金会;
关键词
Fault tolerant computer systems - Gallium compounds - Gates (transistor) - Germanium compounds - Quantum noise - Quantum optics - Qubits - Radiation hardening - Semiconducting indium phosphide - Semiconductor quantum dots;
D O I
10.1103/PhysRevApplied.22.064029
中图分类号
学科分类号
摘要
Fault-tolerant quantum computation requires low physical-qubit gate errors. Many approaches exist to reduce gate errors, including both hardware- and control-optimization strategies. Dynamically corrected gates are designed to cancel specific errors and offer the potential for high-fidelity gates, but they have yet to be implemented in singlet-triplet spin qubits in semiconductor quantum dots, due in part to the stringent control constraints in these systems. In this work, we experimentally implement dynamically corrected gates designed to mitigate hyperfine noise in a singlet-triplet qubit realized in a Si/SiGe double quantum dot. The corrected gates reduce infidelities by about a factor of 3, resulting in gate fidelities above 0.99 for both identity and Hadamard gates. The gate performances depend sensitively on pulse distortions, and their specific performance reveals an unexpected distortion in our experimental setup. © 2024 American Physical Society.
引用
收藏
相关论文
共 50 条
  • [41] A singlet-triplet hole spin qubit in planar Ge
    Jirovec, Daniel
    Hofmann, Andrea
    Ballabio, Andrea
    Mutter, Philipp M.
    Tavani, Giulio
    Botifoll, Marc
    Crippa, Alessandro
    Kukucka, Josip
    Sagi, Oliver
    Martins, Frederico
    Saez-Mollejo, Jaime
    Prieto, Ivan
    Borovkov, Maksim
    Arbiol, Jordi
    Chrastina, Daniel
    Isella, Giovanni
    Katsaros, Georgios
    NATURE MATERIALS, 2021, 20 (08) : 1106 - +
  • [42] A singlet-triplet hole spin qubit in planar Ge
    Daniel Jirovec
    Andrea Hofmann
    Andrea Ballabio
    Philipp M. Mutter
    Giulio Tavani
    Marc Botifoll
    Alessandro Crippa
    Josip Kukucka
    Oliver Sagi
    Frederico Martins
    Jaime Saez-Mollejo
    Ivan Prieto
    Maksim Borovkov
    Jordi Arbiol
    Daniel Chrastina
    Giovanni Isella
    Georgios Katsaros
    Nature Materials, 2021, 20 : 1106 - 1112
  • [43] Superconductivity mediated by spin dimer singlet-triplet excitation
    Matsumoto, M
    Koga, M
    PROGRESS OF THEORETICAL PHYSICS SUPPLEMENT, 2005, (159): : 371 - 375
  • [44] Spontaneous Spin Accumulation in Singlet-Triplet Josephson Junctions
    Sengupta, K.
    Yakovenko, Victor M.
    PHYSICAL REVIEW LETTERS, 2008, 101 (18)
  • [45] Spin relaxation at the singlet-triplet crossing in a quantum dot
    Golovach, Vitaly N.
    Khaetskii, Alexander
    Loss, Daniel
    PHYSICAL REVIEW B, 2008, 77 (04)
  • [46] Singlet-triplet Hamiltonian for spin excitations in a Kondo insulator
    A. F. Barabanov
    L. A. Maksimov
    Journal of Experimental and Theoretical Physics, 2010, 111 : 251 - 257
  • [47] Singlet-triplet Hamiltonian for spin excitations in a Kondo insulator
    Barabanov, A. F.
    Maksimov, L. A.
    JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS, 2010, 111 (02) : 251 - 257
  • [48] Spin potential and singlet-triplet gaps in halocarbenes.
    Vela, A
    Vargas, R
    Alvarez, R
    Galvan, M
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1997, 213 : 379 - COMP
  • [49] SINGLET-TRIPLET SPLITTING
    LINEBERGER, WC
    CHEMICAL & ENGINEERING NEWS, 1984, 62 (52) : 33 - 33
  • [50] Effects of leakage on the realization of a discrete time crystal in a chain of singlet-triplet qubits
    Throckmorton, Robert E.
    Sarma, S. Das
    PHYSICAL REVIEW B, 2022, 106 (24)