Complementary photoelectrochemical performances between dual heterojunctions and homojunction to achieve efficient solar water splitting of ZnIn2S4-based photoanode

The broken verge of carrier separation efficiency is invaluable factor to enhance photoelectrochemical performances of ZnIn2S4-based dual heterojunction. Hence, additional internal electric field is introduced when hexagonal/cubic ZnIn2S4 homojunction interface is used as medium to tandem Sb2S3/hexagonal-ZnIn2S4 and cubic-ZnIn2S4/Cu2S heterojunctions. The enhanced photoelectrochemical properties of Sb2S3/hexagonal/cubic ZnIn2S4/Cu2S are initiated through complementary properties of heterojunctions and homojunction components: (i) carrier separation efficiency verge of heterojunctions is broken to 56.29 % due to cooperation of homojunction, (ii) photoinduced carrier excitation energy homojunction is reduced to 2.06 eV with the modification of heterojunctions, (iii) built-in electric field is reinforced and electron delocalization of homojunction is enhanced by heterojunction, (iv) photoelectrochemical reaction sites of homojunction are increased through optimizing surface states effect of heterojunctions. As a result, the upgraded to 31.80 times higher water oxidization photocurrent density of 4.77 mA/cm(2) is achieved by Sb2S3/hexagonal/cubic ZnIn2S4/Cu2S with decreased reaction overpotentials to 0.60 V. This work raises new thoughts on modified PEC performances of ZnIn2S4 via composite methods.