Characterization of optical depth for laser produced plasma extreme ultraviolet source

被引：2
作者：
Wang, Tianze [1 ,2 ,3 ]
Hu, Zhenlin [1 ,2 ]
He, Liang [1 ,2 ]
Lin, Nan [1 ,2 ]
Leng, Yuxin [1 ]
Chen, Weibiao [4 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Ultra Intense Laser Sci & Technol, Shanghai 201800, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Dept Precis Opt Engn, Shanghai 201800, Peoples R China
[3] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
[4] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Space Laser Engn Dept, Shanghai 201800, Peoples R China
来源：
VACUUM | 2025年 / 231卷
基金：
中国博士后科学基金;
关键词：
Extreme ultraviolet lithography; Laser-produced plasmas; Solid-state laser; Conversion efficiency; Optical depth; LIGHT; ABSORPTION;
D O I：
10.1016/j.vacuum.2024.113805
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This study investigates the emission mechanism of laser-produced plasma extreme ultraviolet source (LPP-EUV). In the experiment, the EUV radiation is generated by a 1064 nm laser interacting with slab Sn target. The EUV emission is characterized by EUV energy monitors and an EUV spectrometer. The dependency of CE on laser intensity and plasma relative optical depth is explored by a plasma emission-absorption layer model. The dependency is confirmed by an optical interferometry measurement of plasma electron density for the first time. Our work provides a method for characterizing and optimizing the optical depth of laser driven EUV source.
引用
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页数：6
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