Laser induced photoconductivity in sol-gel derived Al doped ZnO thin films

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[1] Eskandari, F.
[2] Ranjbar, M.
[3] Kameli, P.
[4] Salamati, H.
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Ranjbar, M. (ranjbar@cc.iut.ac.ir) | 1600年 / Elsevier Ltd卷 / 649期
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Abstract In this paper Al doped ZnO (AZO) thin films with 0; 3; 6 and 12 at. % Al concentration were prepared by sol-gel method on glass substrates. The deposited films were annealed at different temperatures of 300; 350; 400; 450 and 500 °C for 1 h in air. X-ray diffraction (XRD) showed wurtzite crystalline structure for the films annealed above 400 °C. The films were subsequently irradiated by beams of excimer (KrF; λ = 248 nm) laser. The evolution of crystal structure; surface morphology and optical properties were studied using XRD; filed emission scanning electron microscope (FE-SEM) and UV-Vis spectrophotometer; respectively. Real-time measurement of electrical conductivity during laser irradiation showed a transient or persistent photoconductivity effect. The effect of laser energy on this photoconductivity was also investigated. Based on the observed photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS); the observed photoconductivity effect was described. © 2015 Elsevier B.V;
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