Study of the InGaAs planar p-i-n photodiode focal plane array with p-n junctions of reduced sizes

被引：0

作者：

Zaletaev, N.B. ^{[1
,2
]}

Boltar, K.O. ^{[1
,2
]}

Lopukhin, A.A. ^{[1
,2
]}

Chinareva, I.V. ^{[1
,2
]}

Gabbasova, E.V. ^{[1
,2
]}

机构：

[1] Orion R and P Association, Inc., 9 Kosinskaya str., Moscow,111538, Russia

[2] Moscow Institute of Physics and Technology, 9 Institute al., Dolgoprudny, Moscow Region,141700, Russia

来源：

Applied Physics | 2015年 / 2015-January卷 / 04期

关键词：

Gallium alloys - Focusing - Focal plane arrays - Semiconducting indium gallium arsenide - Semiconductor alloys - Indium alloys - Semiconducting indium;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Study of a 320x256 InGaAs planar p-i-n photodiode focal plane array with the p-n junctions of 9x9 fan size and the pitch of 30 fan was carried out. Such a reduction of p-n junction sizes as compared with similar 320x256 arrays with the p-n junctions of 25x25 fan size and the same pitch has resulted in inessential decrease in responsivity of the photodiodes with decrease of dark currents of the photodiodes by 1.5 orders of magnitude and some increase in detectivity of the array.

引用

页码：71 / 75