Near-field infrared spectroscopy: Advanced research method in thin film analysis

被引:1
作者
Kim, Jiho [1 ]
Chae, Boknam [1 ]
Lee, Sangsul [1 ,2 ]
机构
[1] POSTECH, Pohang Accelerator Lab, Pohang 37673, South Korea
[2] POSTECH, Dept Semicond Engn, Pohang 37673, South Korea
基金
新加坡国家研究基金会;
关键词
s-SNOM; Infrared nanospectroscopy; 2D materials; Block copolymer; Photoresist; POLYMERS; CRYSTALS; CONTRAST; RESIST; EUV;
D O I
10.1016/j.cap.2024.11.002
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This article introduces several cases of s-SNOM (Scattering-type scanning near-field optical microscopy) based on a SPM (Scanning probe microscopy) for chemical thin film. A highly concentrated near-field infrared performs the chemical analysis of s-SNOM at the sharp apex of the metal-coated atomic microscope tip. This attractive technique, which provides both surface morphology and chemical information of the material simultaneously, various studies have been published, including surface polariton propagation, Moire superlattice, and ballistic valley transport. Further, s-SNOM successfully visualized the formation of lamellar nanostructures of BCP and the latent image of photoresist formed by EUV (extreme ultraviolet). These results were cross-validated through traditional GIWAXS (Grazing-incidence wide-angle X-ray scattering) and FTIR (Fourier transform infrared) analysis. s-SNOM is a useful tool for providing new insights into material analysis by visualizing nanoscale chemical information of local regions that conventional measurements could not confirm.
引用
收藏
页码:41 / 50
页数:10
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