Effective mobility model of polysilicon thin-film transistors

被引：0

作者：

Yao R.-H. ^{[1
]}

Ou X.-P. ^{[1
]}

机构：

[1] School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, Guangdong

来源：

Huanan Ligong Daxue Xuebao/Journal of South China University of Technology (Natural Science) | 2010年 / 38卷 / 05期

关键词：

Grain boundary; Mobility model; Polysilicon; Thin-film transistor;

D O I：

10.3969/j.issn.1000-565X.2010.05.012

中图分类号：

学科分类号：

摘要：

Proposed in this paper is an effective mobility model of polysilicon thin-film transistors, which simultaneously takes into account the number of grains inside the transistor channel, the transport properties of carriers between grains and grain boundaries and the gate bias controlling the mobility degradation effect, and adapts to the polysilicon thin-film transistors from small grains to large ones in linear region. It is found that, when the grain size Lg is less than 0. 4μm, the effective mobility is mainly controlled by the grain boundaries, that the effective mobility can be improved by reducing the trap density of grain boundaries, that decreasing the gate oxide thickness may enhance control of effective mobility by gate voltage, and that clear effective mobility degradation may occur at a high gate voltage.

引用

页码：61 / 64

页数：3

共 12 条

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