Evaluation of chemical mechanical polishing characteristics using mixed abrasive slurry: A study on polishing behavior and material removal mechanism

被引：14

作者：

Zhu, Xiaoxiao ^{[1
,2
]}

Ding, Juxuan ^{[1
,2
]}

Mo, Zhangchao ^{[1
,2
]}

Jiang, Xuesong ^{[3
]}

Sun, Jifei ^{[3
]}

Fu, Hao ^{[1
,2
]}

Gui, Yuziyu ^{[1
,2
]}

Ban, Boyuan ^{[1
]}

Wang, Ling ^{[1
]}

Chen, Jian ^{[1
,3
]}

机构：

[1] Chinese Acad Sci, Inst Solid State Phys, Key Lab Photovolta & Energy Conservat Mat, HFIPS, Hefei 230031, Peoples R China

[2] Univ Sci & Technol China, Hefei 230026, Peoples R China

[3] Hefei Comprehens Natl Sci Ctr, Inst Energy, Hefei 230031, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2025年 / 679卷

基金：

中国国家自然科学基金;

关键词：

Chemical mechanical polishing (CMP); Ceria abrasive; Diamond abrasive; Interfacial chemical reaction; Material removal mechanism; MECHANOCHEMICAL REACTIONS; COMPOSITE-PARTICLES; SURFACE; CEO2; CMP; WAFER; PERFORMANCE; EFFICIENCY; GRITS; CE3+;

D O I：

10.1016/j.apsusc.2024.161157

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Chemical mechanical polishing (CMP) is currently the most widely used method for material removal and surface planarization of glass. An environmentally friendly method of improving polishing performance by using a mixed abrasive slurry of ceria and diamond was proposed in this study. The results of polishing experiments showed that compared with single ceria abrasive, the materials removal rate (MRR) of the mixed abrasive slurry increased from 82.7 nm/min to 109.6 nm/min, while the surface roughness (Ra) decreased from 26.4 nm to 0.6 nm after polishing. An amorphous reaction layer formed during the CMP process was observed directly using transmission electron microscopy. Thermodynamic analysis was conducted to investigate the interfacial chemical reactions during the polishing process. A model was proposed to describe the mechanism of the materials removal.

引用

页数：11

共 54 条

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