Energy storage performance and dielectric tunability of AgNbO3 ferroelectric films

被引:0
|
作者
Li, Da [1 ]
Yao, Yao [2 ]
Wang, Xiaofei [1 ]
Wang, Jing [3 ]
Zhang, Su-Wei [4 ,5 ]
Zhao, Lei [1 ]
机构
[1] Hebei Univ, Coll Phys Sci & Technol, Baoding 071002, Peoples R China
[2] Beijing Inst Metrol, Beijing 100029, Peoples R China
[3] Nanjing Univ Aeronaut & Astronaut, Coll Aerosp Engn, State Key Lab Mech & Control Aerosp Struct, Nanjing 210016, Peoples R China
[4] Tsinghua Univ, Sch Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China
[5] Foshan Southern China Inst New Mat, Foshan 528247, Peoples R China
基金
中国国家自然科学基金;
关键词
Thin film; AgNbO3; Dielectric; Ferroelectric; Energy storage performance; FREE ANTIFERROELECTRIC CERAMICS; DENSITY; SUBSTITUTION; TRANSITIONS; STABILITY;
D O I
10.1016/j.jallcom.2024.177518
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
AgNbO3 ceramics have attracted significant attention as environmentally friendly energy storage materials; however, their low energy densities limit further development. In this study, a 400-nm AgNbO3 films with a dense microstructure and flat surface is prepared by pulsed laser deposition. The dielectric tenability and hysteresis loops of the film reveal its ferroelectric nature. The dielectric tunability of the AgNbO3 film was 63.6% at 600 kV/cm. The breakdown strength reached 1500 kV/cm, resulting in a high recoverable energy density of 13.3 J/cm(3). The recoverable energy storage density of AgNbO3 films indicates good temperature stability with a variation of < 10% between 30 degrees C and 150 degrees C and good frequency stability with a variation of < 10% between 10(3) Hz and 10(5) Hz. These results suggest that AgNbO(3 )dielectric films are promising energy storage materials.
引用
收藏
页数:7
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