Additional-body effects in a self-aligned deca-nanometer ultrathin-body and buried oxide silicon-on-insulator metal-oxide-semiconductor field-effect transistor: A three-dimensional simulation study

被引：0

作者：

Lin, Jyi-Tsong ^{[1
]}

Eng, Yi-Chuen ^{[1
]}

Chen, Cheng-Hsin ^{[1
]}

Fan, Yi-Hsuan ^{[1
]}

机构：

[1] Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan

来源：

Japanese Journal of Applied Physics | 2011年 / 50卷 / 11 PART 1期

关键词：

Compendex;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

MOSFET devices

引用