New inversion channel electron mobility model of the 4H-SiC n-MOSFET

被引：1

作者：

Tang X. ^{[1
]}

Zhang Y. ^{[1
]}

机构：

[1] Ministry of Education Key Lab. of Wide Band-Gap Semiconductor Materials and Devices, Xidian Univ

来源：

Xi'an Dianzi Keji Daxue Xuebao/Journal of Xidian University | 2011年 / 38卷 / 01期

关键词：

Coulomb scattering; Inversion layers; Mobility; Silicon carbide;

D O I：

10.3969/j.issn.1001-2400.2011.01.007

中图分类号：

学科分类号：

摘要：

An inversion channel electron mobility model of the 4H-SiC n-MOSFET is presented according to the physical mechanism. The quasi-2D Coulomb scattering mobility model based on the first principles takes account of the screening effect by carriers and temperature on Coulomb scattering, in which no empirical parameters are included. This can be directly embedded into the 2-D device simulator. The numerical relationship between the proportionality constant of the surface roughness scattering mobility model and the surface roughness degree is deduced. Correctness of the model is confirmed by comparison between simulated and experimental results. The simulated results show that Coulomb scattering plays a dominant role near the interface. Surface roughness scattering becomes more obvious at a higher gate voltage and it is the dominant scattering mechanism to limit the mobility in the inversion layer for the higher doped SiC MOSFET.

引用

页码：42 / 46

页数：4

共 12 条

[1]

Tang X., Zhang Y., Zhang Y., Study of 4H-SiC epitaxial N-Channel MOSFET, Chinese Physics B, 19, 4, (2010)

[2]

Powell S.K., Goldsman N., McGarrity J.M., Et al., Physics-based numerical modeling and characterization of 6H-silicon-carbide metal-oxide-semiconductor field-effect transistors, Journal of Applied Physics, 92, 7, pp. 4053-4061, (2002)

[3]

Pe'rez-Toma's A., Godignon P., Mestres N., Et al., A field-effect electron mobility model for Sic mosfets including high density of traps at the interface, Microelectronic Engineering, 83, 12, pp. 440-445, (2006)

[4]

Xu J., Li C., Wu H., Analyses on high-temperture electrical properties of 4h-SiC N-MOSFET, Acta Physica Sinica, 54, 6, (2005)

[5]

Pennington G., Goldsman N., Simulation of electron transport in (0001) and (11-20) 4H-SiC inversion layers, Journal of Applied Physics, 106, 6, pp. 063701-063713, (2009)

[6]

Potbhare S., Goldsman N., Pennington G., Et al., Characterization of 4H-SiC mosfet interface trap charge density using a first principles coulomb scattering mobility model and device simulation, SISPAD 2005, pp. 95-98, (2005)

[7]

Tang X., Zhang Y., Zhang Y., Et al., Analysis of the effect of interface state charges on field-effect mobility of n-channel 6H-SiC MOSFET, Acta Physica Sinica, 51, 4, pp. 880-884, (2003)

[8]

Xu J., Wu H., Lai P.T., Et al., Effect of SiO<sub>2</sub>/SiC interface on inversion channel electron mobility of 4H-SiC N-MOSFET, Chinese Journal of Semiconductors, 25, 2, pp. 200-205, (2004)

[9]

ISE TCAD user's manual, (2001)

[10]

Lodzinski M., Perez-Tomas A., Guy O.J., Characterization of Mos interfaces on protected and un-protected 4H-SiC Surfaces, MIEL 26th International Conference, pp. 541-543, (2008)

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