WSe2/n-GaN and WSe2/p-GaN heterojunction band alignment

In this work, we measured the band alignment of 2D/3D heterostructures of WSe2 on n-doped, p-doped, and intrinsic GaN by x-ray photoelectron spectroscopy. The WSe2/n-GaN heterojunction exhibits type-II band alignment, with measured valence band offset (VBO) and conduction band offset (CBO) values of 2.28 +/- 0.15 eV and 0.96 +/- 0.15 eV, respectively. On the other hand, the WSe2/p-GaN heterojunction shows type-I band alignment, with measured VBO and CBO values of 0.1 +/- 0.15 eV and 1.22 +/- 0.15 eV, respectively. The results show that doping has a significant effect on the arrangement of the energy bands of the heterostructure, and provides a reference for device applications based on heterojunctions.