Electron Beam Lithography of 15 x 15 nm2 Pitched Nanodot Arrays with a Size of Less than 10 nm Using High Development Contrast Salty Developer

被引：22

作者：

Komori, Takuya ^{[1
]}

Zhang, Hui ^{[1
]}

Akahane, Takashi ^{[1
]}

Mohamad, Zulfakri ^{[1
]}

Yin, You ^{[1
]}

Hosaka, Sumio ^{[1
]}

机构：

[1] Gunma Univ, Grad Sch Engn, Kiryu, Gunma 3768515, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 06期

关键词：

HYDROGEN SILSESQUIOXANE; PATTERNED MEDIA; DOT ARRAYS; FINE PIT; FABRICATION; RESIST;

D O I：

10.1143/JJAP.51.06FB02

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the effects of developer and hydrogen silsesquioxane (HSQ) resist thickness in the formation of dot arrays with a pitch of < 18 x 18 nm(2) by using 30-keV electron beam (EB) lithography for bit patterned media (BPM). Optimum resist thickness and developer were investigated for the formation of fine dot arrays. We found that a 12-nm-thick HSQ resist was suitable to form fine dot patterns and the addition of NaCl into tetramethylammonium hydroxide (TMAH) could improve the development contrast (gamma-value) of HSQ (the highest is 9.7). By using the 12-nm-thick HSQ resist film and 2.3 wt% TMAH/4 wt% NaCl developer, we successfully fabricated very fine resist dot arrays with a dot size of < 10 nm and a pitch of 15 x 15 nm(2), which corresponds to a storage density of about 3 Tbit/in.(2) in BPM. (C) 2012 The Japan Society of Applied Physics

引用

页数：4