Series resistance in n-GaN/AlN/n-Si heterojunction structure

被引：0
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作者：
Kondo, Hiroyuki [1 ]
Koide, Norikatsu [1 ]
Honda, Yoshio [1 ]
Yamaguchi, Masahito [1 ]
Sawaki, Nobuhiko [1 ,2 ]
机构：
[1] Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya 464-8603, Japan
[2] Akasaki Research Center, Nagoya University, Chikusa-ku, Nagoya 464-8603, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2006年 / 45卷 / 5 A期
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Journal article (JA)
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页码：4015 / 4017
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