Design and implementation of Ka-band AlGaN/GaN HEMTs

被引：0

作者：

Wang D.-F. ^{[1
,2
]}

Yuan T.-T. ^{[1
,2
]}

Wei K. ^{[1
]}

Liu X.-Y. ^{[1
]}

Liu G.-G. ^{[1
]}

机构：

[1] Institute of Microelectronics, Chinese Acad. of Sci.

[2] Graduated University of Chinese Acad. of Sci.

来源：

Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves | 2011年 / 30卷 / 03期

关键词：

GaN/AlGaN HEMT; Ka band; Millimeter-wave;

D O I：

10.3724/sp.j.1010.2011.00255

中图分类号：

学科分类号：

摘要：

In order to improve frequency characteristics, AlGaN/GaN HEMTs were designed by reducing source-drain spacing, optimizing gate-structure and peripheral structure. The devices have been fabricated with domestic GaN epitaxial wafer and process. Measurements indicated that the AlGaN/GaN HEMTs can operate at Ka-band. At VDS=30 V, the HEMTs with 2×75 μm gate-width exhibited a current gain cutoff frequency (fT) of 32 GHz and a maximum frequency of oscillation (fmax) of 150 GHz; Under CW operating condition at 30 GHz, the linear gain reaches 10.2dB. For the HEMTs with 6×75 μm gate-width, fT is 32 GHz and fmax is 92GHz; Under CW operating condition at 30 GHz, the linear gain reaches 8.5 dB. The breakdown voltage is over 60 V.

引用

页码：255 / 259

页数：4

共 12 条

[1] Wu Y.F., Moore M., Saxler A., Et al., 40-W/mm double field-plated GaN HEMTs, IEEE 64th Device Research Conference, 2006, pp. 151-152, (2006)
[2] Vetury R., Wei Y., Green D.S., Et al., High power, high Efficiency, AlGaN/GaN HEMT technology for wireless base station applications, IEEE MTT-S International Microwave Symposium digest, 2005, pp. 487-490, (2005)
[3] Palacios T., Chakraborty A., Rajan S., Et al., High-power AlGaN/GaN HEMTs for Ka-band applications, IEEE Electron Device Letters, 26, 11, pp. 781-783, (2005)
[4] Wu Y.F., Moore M., Saxler A., Et al., 8-watt GaN HEMTs at millimeter-wave frequencies, IEEE International Electron Devices Meeting, 2005, pp. 583-585, (2005)
[5] Micovic M., Kurdoghlian A., Hashimoto P., Et al., GaN HFET for W-band power applications, IEEE International Electron Devices Meeting, 2006, pp. 1-3, (2006)
[6] Jimenez J.L., Chowdhury U., X-band GaN FET reliability, IEEE 46th International Reliability Physics Symposium, 2008, pp. 429-435, (2008)
[7] Wang D., Chen X., Liu X., A Ku-band 3.4 W/mm power AlGaN/GaN HEMT on a sapphire substrate, Journal of Semiconductors, 31, 2, (2010)
[8] Wang D., Wei K., Yuan T., Et al., High performance AlGaN/GaN HEMTs with 2.4 μm source-drain spacing, Journal of Semiconductors, 31, 3, (2010)
[9] Sun Y., Eastman L.F., Trade-offs and challenges of short channel design on millimetre-wave power performance of GaN HFETs, Electronics Letters, 41, 15, (2005)
[10] Wang D., Liu X., Simulation on Gate Structure of Ka Band AlGaN/GaN HEMT, Chinese Journal of Electron Devices, 32, 5, pp. 859-863, (2009)

← 1 2 →