Study of strained InGaAs/GaAs quantum-well laser by MOCVD

被引：0

作者：

Liu, An-Ping ^{[1
]}

Duan, Li-Hua ^{[2
]}

Zhou, Yong ^{[2
]}

机构：

[1] Department of Applied physics, Chongqing University, Chongqing 400030, China

[2] Chongqing Optoelectronics Research Institute, Chongqing 400060, China

来源：

Guangdianzi Jiguang/Journal of Optoelectronics Laser | 2010年 / 21卷 / 02期

关键词：

Optical waveguides - Organometallics - Buffer layers - Organic chemicals - Semiconducting indium gallium arsenide - Semiconductor quantum wells - Industrial chemicals - Metallorganic chemical vapor deposition - Organic lasers - Semiconducting indium;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

An InGaAs/GaAs strained quantum-well(QW) is prepared by metal-organic chemical-vapor deposition(MOCVD).During the growth, the surface growth quality and PL spectra of this strained QW are improved obviously by reducing temperature, increasing speed and using strained buffer layer(SBL).The experimental results indicate that the optimized condition and SBL are used to significantly improve the QW performance. A 1 054 nm laser is fabricated with this strained QW, which exhibits good threshold current and slope efficiency. The spectral width of the strain QW laser is 1.6 nm at an injection current of 50 mA.

引用

页码：163 / 165