A new type of silicon drift detector with curved surface

被引：0

作者：

Cai, Lu ^{[1
]}

Yu, Min ^{[1
]}

Tian, Dayu ^{[1
]}

Wang, Jinyan ^{[1
]}

Jin, Yufeng ^{[1
]}

机构：

[1] National Key Laboratory of Nano/Micro Fabrication Technology, Institute of Microelectronics, Peking University, Beijing, 100871, China

来源：

Proceedings of SPIE - The International Society for Optical Engineering | 2011年 / 8191卷

关键词：

Compendex;

D O I：

International Symposium on Photoelectronic Detection and Imaging 2011: Sensor and Micromachined Optical Device Technologies

中图分类号：

学科分类号：

摘要：

Silicon

引用

共 50 条

[21] Electrothermal analysis of a TEC-less IR microbolometer detector including self-heating and thermal drift [J].

Felczak, M. ;

Sosnowski, T. ;

Strakowski, R. ;

Bieszczad, G. ;

Gogler, S. ;

Stepien, J. ;

Wiecek, B. .

QUANTITATIVE INFRARED THERMOGRAPHY JOURNAL, 2024, 21 (04) :217-241

[22] SURFACE BARRIER DETECTOR FABRICATION AND FAST NEUTRON SPECTROMETRY. [J].

Srikantiah, R.V. ;

Joneja, O.P. ;

Shetty, H.J. ;

Navalkar, M.P. ;

Coachman, J.S. .

1978, 32 (03) :198-200

[23] DESIGN OF AN IMPEDANCE-TYPE FLAW DETECTOR PICKUP. [J].

Lange, Yu.V. .

1600, (08)

[24] INFLUENCE OF ALTERNATING DRIFT OF CARRIERS ON PROPAGATION OF SURFACE WAVES IN LAYER STRUCTURES. [J].

Chernozatonskii, L.A. ;

Ermolaeva, I.V. .

Soviet physics. Semiconductors, 1980, 14 (05) :559-564

[25] SURFACE STATES AND BUILT-IN CHARGE IN SILICON-SILICON DIOXIDE SYSTEM. [J].

Uritskii, V.Ya. ;

Konorov, P.P. .

1600, (08)

[26] Curved compression surface with wall pressure and Mach number distribution using geometric combination [J].

Zhang, Lin ;

Zhang, Kun-Yuan ;

Chen, Qiang-Hong ;

Qiu, Yong ;

Li, Ming-Hai .

Hangkong Dongli Xuebao/Journal of Aerospace Power, 2017, 32 (04) :850-857

[27] Advancing EW with New Silicon and Standards [J].

Hosking, Rodger .

Microwave Journal, 2022, 65 (06)

[28] Fractal characteristics of surface morphology for hydrogenated silicon film [J].

Chin Sci Bull, 19 (1659)

[29] ON THE KNIFE SCRATCHING ON THE SURFACE OF GRAIN ORIENTED SILICON STEEL [J].

FUKAWA, K .

JOURNAL OF THE JAPAN INSTITUTE OF METALS, 1981, 45 (04) :388-394

[30] INTERIMPURITY RADIATIVE RECOMBINATION IN SEMICONDUCTORS OF THE SILICON TYPE. [J].

Vyazovskii, M.V. .

Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1976, 10 (06) :649-651

← 1 2 3 4 5 →