Study of terahertz emission from surfaces of Cu(InGa)Se2 layers

被引：0
作者：
机构：
[1] Center for Physical Sciences and Technology, LT-01108 Vilnius
[2] Faculty of Physics, Vilnius University, LT-10222 Vilnius
来源：
| 1600年 / Polska Akademia Nauk卷 / 124期
关键词：
Copper compounds - Zinc oxide - Electric fields - Gallium compounds - Indium compounds - Terahertz waves - II-VI semiconductors;
D O I：
10.12693/APhysPolA.124.846
中图分类号：
学科分类号：
摘要：
In this contribution, we report on investigations of THz emission from Cu(In,Ga)Se2 layers, deposited from a single copper-de-cient sputtering target. Emission from Cu(In,Ga)Se2 layer surface and from multilayer structure with transparent ZnO layers were studied. It was determined that additional undoped ZnO layer reduces the amplitude of THz emission, while additional n-type ZnO layers increase the emission amplitude again. This effect can be attributed to stronger electric field in the heterostructure between p-type Cu(In,Ga)Se2 and n-type ZnO layers.
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页码：846 / 848
页数：2
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共 4 条
[1]  
Jackson P., Hariskos D., Lotter E., Paetel S., Wuerz R., Menner R., Wischmann W., Powalla M., Prog. Photovolt. Res. Appl, 19, (2011)
[2]  
Adomavicius R., Krotkus A., Lustaviciute R., Molis G., Kois J., Bereznev S., Mellikov E., Gashin P., Electron. Lett, 43, (2007)
[3]  
Arlauskas A., Krotkus A., Semicond. Sci. Technol, 27, (2012)
[4]  
Ma G.H., Li D., Ma H., Shen J., Wu C.G., Ge J., Hu S.H., Dai N., Appl. Phys. Lett, 93, (2008)
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