A Learning-based Control Scheme for MTJ-based Non-volatile Flip-Flops

被引:0
作者
Nakabeppu S. [1 ]
Yamasaki N. [1 ]
机构
[1] Keio University, Kanagawa, Yokohama
关键词
artificial intelligence; machine learning; magnetic tunnel junction; neural network hardware; non-volatile flip-flop;
D O I
10.2197/ipsjtsldm.17.16
中图分类号
学科分类号
摘要
A magnetic tunnel junction (MTJ) based non-volatile flip-flop (NVFF) is attractive for non-volatile power gating to reduce power consumption and for non-volatile checkpointing to improve fault tolerance. An MTJ-based NVFF can perform a store operation to write the slave latch value to the MTJs, non-volatile devices, and a restore operation to write the MTJs value to the slave latch. However, a store operation is a stochastic operation. The store operations’ success rate depends on their duration, NVFF characteristics, voltage, and temperature. Their success rate changes statically because each NVFF has different characteristics due to process variation in actual chips. Their success rate changes dynamically because voltage and temperature change dynamically depending on operating environments. Our goal is to reduce the checkpoint creation’s energy consumption while ensuring its success. We propose a learning-based hardware scheme that dynamically finds the appropriate parameters to achieve our goal. The proposed scheme consists of a machine-learning unit and an exploration unit. The machine-learning unit learns and predicts the store operations’ success rate by inputting their duration, voltage, and temperature. The exploration unit explores the trained machine-learning unit to find the appropriate parameters. The evaluation shows that the proposed scheme could achieve our goal. © 2024 Information Processing Society of Japan.
引用
收藏
页码:16 / 35
页数:19
相关论文
共 44 条
[1]  
Ransford B., Sorber J., Fu K., Mementos: System Support for Long-Running Computation on RFID-Scale Devices, SIGARCH Comput. Archit. News, 39, 1, pp. 159-170, (2011)
[2]  
Liu Q., Jung C., Lightweight hardware support for transparent consistency-aware checkpointing in intermittent energy-harvesting systems, 2016 5th Non-Volatile Memory Systems and Applications Symposium (NVMSA), pp. 1-6, (2016)
[3]  
Xie M., Pan C., Zhao M., Liu Y., Xue C.J., Hu J., Avoiding Data Inconsistency in Energy Harvesting Powered Embedded Systems, ACM Trans. Des. Autom. Electron. Syst, 23, 3, (2018)
[4]  
Kudo M., Usami K., Nonvolatile power gating with MTJ based nonvolatile flip-flops for a microprocessor, 2017 IEEE 6th NonVolatile Memory Systems and Applications Symposium (NVMSA), pp. 1-6, (2017)
[5]  
Ikegawa S., Mancoff F.B., Janesky J., Aggarwal S., Magnetoresistive Random Access Memory: Present and Future, IEEE Trans. Electron Devices, 67, 4, pp. 1407-1419, (2020)
[6]  
Mikolajick T., Schroeder U., Slesazeck S., The Past, the Present, and the Future of Ferroelectric Memories, IEEE Trans. Electron Devices, 67, 4, pp. 1434-1443, (2020)
[7]  
Chen Y., ReRAM: History, Status, and Future, IEEE Trans. Electron Devices, 67, 4, pp. 1420-1433, (2020)
[8]  
Kim T., Lee S., Evolution of Phase-Change Memory for the Storage-Class Memory and Beyond, IEEE Trans. Electron Devices, 67, 4, pp. 1394-1406, (2020)
[9]  
Kudo M., Low Power technology of LSI by Fine-Grain Power Gating and Magnetic Tunnel Junction (in Japanese), (2016)
[10]  
Sakimura N., Sugibayashi T., Nebashi R., Kasai N., Nonvolatile Magnetic Flip-Flop for standby-power-free SoCs, 2008 IEEE Custom Integrated Circuits Conference, pp. 355-358, (2008)