Crystallization control of fullerene by mist vapor deposition method and its application to n-type organic transistors

被引：0

作者：

Katori S. ^{[1
]}

Kobashi K. ^{[1
]}

机构：

[1] National Institute of Technology, Tsuyama College, Numa, Tsuyama

来源：

Zairyo/Journal of the Society of Materials Science, Japan | 2021年 / 70卷 / 10期

关键词：

Fullerene; Mist vapor deposition method; N-type OFET;

D O I：

10.2472/jsms.70.745

中图分类号：

学科分类号：

摘要：

We discussed on crystallization and crystal length control of fullerene(C60) by mist vapor deposition method and fabrication of n-type organic transistor. It was revealed that these crystallinities were affected by the substrate temperature and the amount of mist supplied. The n-type organic transistors using fullerene crystal were able to operate in the atmospheric condition. The electron mobility was estimated to be 7.36×10-6 [cm2/Vs]. Furthermore, the transistor characteristics have been improved by applying HMDS treatment and annealing processing. In particular, the HMDS treatment caused crystals to precipitate between the source and drain electrodes. © 2021 The Society of Materials Science, Japan

引用

页码：745 / 750

页数：5

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