Effect of Si:C ratio on porosity and flexural strength of porous self-bonded silicon carbide ceramics

被引：0

作者：

Lim, Kwang-Young ^{[1
]}

Kim, Young-Wook ^{[1
]}

Woo, Sang-Kuk ^{[2
]}

Han, In-Sub ^{[2
]}

机构：

[1] Department of Materials Science and Engineering, University of Seoul

[2] Energy Materials Research Center, Korea Institute of Energy Research

来源：

Journal of the Korean Ceramic Society | 2008年 / 45卷 / 05期

关键词：

Porosity; Porous ceramics; Self-bonded SiC; Silicon carbide; Strength;

D O I：

10.4191/KCERS.2008.45.5.285

中图分类号：

学科分类号：

摘要：

Porous self-bonded silicon carbide (SiC) ceramics were fabricated at temperatures ranging from 1750 to 1850°C using SiC, silicon (Si), and carbon (C) powders as starting materials. The effect of the Si:C ratio on porosity and strength was investigated as a function of sintering temperature. It was possible to produce self-bonded SiC ceramics with porosities ranging from 36% to 43%. The porous ceramics showed a maximal porosity when the Si:C ratio was 2:1 regardless of the sintering temperature. In contrast, the maximum strength was obtained when the ratio was 5:1.

引用

页码：285 / 289

页数：4

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