Quasi-resonant flyback DC/DC converter using GaN power transistors

被引：0

作者：

Jeng, S.L. ^{[1
]}

Peng, M.T. ^{[2
]}

Hsu, C.Y. ^{[3
]}

Chieng, W.H. ^{[3
]}

Shu, Jet P.H. ^{[4
]}

机构：

[1] Dept. of Electrical Engineering, Ta Hua Institute of Technology, Hsinchu

[2] Mechanical and Systems Research Laboratories, Industrial Technology Research Institute, HsinChu

[3] Dept. of Mechanical Engineering, National Chiao-Tung University, Hsinchu

来源：

World Electric Vehicle Journal | 2012年 / 5卷 / 02期

关键词：

Flyback converter; GaN HEMT; Soft-switching;

D O I：

10.3390/wevj5020567

中图分类号：

学科分类号：

摘要：

Quasi-resonant flyback converter is realized with the aim to demonstrate the topology feasibility using the normally-on switching behaviour of the gallium nitride (GaN) power transistor. Reference converters utilize GaN and silicon-based MOSET as the switching devices to compare the electric characteristics, and power losses. Quasi-resonant technology offers reduced turn-on losses, resulting in increased efficiency and lower device temperature. The turn-on losses dominate the power losses as the switching frequency of the power supply increases. The combined advantages of gate charge and on-resistance for GaN in the 60 watt reference converter leads to improve the turn-off conduction loss. GaN based power converter provides up to 7.02% improved efficiency over silicon based MOSFETs. The converter performance improvement opens the possibility of fully exploiting the wide advantages of GaN transistors in power electronic application. © 2012 WEVA.

引用

页码：567 / 573

页数：6

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