Area-selective post-deposition annealing process using flash lamp and Si photoenergy absorber for metal/high-k gate metal-insulator-semiconductor field-effect transistors with NiSi source/drain

被引：0

作者：

Matsuki, Takeo ^{[1
]}

Nishimura, Isamu ^{[1
,2
]}

Akasaka, Yasushi ^{[1
]}

Hayashi, Kiyoshi ^{[1
,3
]}

Noguchi, Masataka ^{[1
,4
]}

Yamashita, Koji ^{[1
,5
]}

Torii, Kazuyoshi ^{[1
,6
]}

Kasai, Naoki ^{[1
,4
]}

Nara, Yasuo ^{[1
]}

机构：

[1] Research Department 1, Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

[2] ROHM Co., Ltd., 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan

[3] Renesas Technology Corp., Marunouchi Bldg., 4-1 Marunouchi 2-chome, Chiyoda-ku, Tokyo 100-6334, Japan

[4] NEC Corp., 7-1 Shiba 5-chome, Minato-ku, Tokyo 108-8001, Japan

[5] Tokyo Electron Ltd., TBS Broadcast Center, 3-6 Akasaka 5-chome, Minato-ku, Tokyo 107-8481, Japan

[6] Hitachi, Ltd., 6-6 Marunouchi 1-chome, Chiyoda-ku, Tokyo 100-8280, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2006年 / 45卷 / 4 B期

关键词：

We have proposed an area-selective post-deposition annealing (PDA) process that involves a combination of flash lamp annealing and the use of a Si photoenergy absorber (Si-PEA) for metal/high-k gate last metal-insulator- semiconductor field-effect transistors (MISFETs) with NiSi on source/drain (S/D). The process makes it possible to suppress the increase in both the sheet resistance and junction leakage current of NiSi S/D regions. This PDA process also showed optimality for silicide gate electrode formation with silicidation of part of the Si-PEA. It was found that the flash lamp PDA with Si-PEA on nickel-silicide/HfAlOx/SiO2 gate-last MISFETs reduced electron trapping at the gate dielectric and resulted in better PBTI immunity than conventional rapid thermal PDA and flash lamp PDA without Si-PEA. © 2006 The Japan Society of Applied Physics;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Journal article (JA)

引用

页码：2939 / 2944