Growth temperature dependence of EU-doped GaN grown by organometallic vapor phase epitaxy

被引：0

作者：

Nishikawa A. ^{[1
]}

Kawasaki T. ^{[1
]}

Furukawa N. ^{[1
]}

Terai Y. ^{[1
]}

Fujiwara Y. ^{[1
]}

机构：

[1] Division of Materials and Manufacturing Sei, Graduate School of Eng., Osaka Univ., Yamadaoka, Suita

来源：

Zairyo/Journal of the Society of Materials Science, Japan | 2010年 / 59卷 / 09期

关键词：

Europium; Gallium nitride; Organometallic vapor phase epitaxy; Photoluminescence; Semiconductor;

D O I：

10.2472/jsms.59.671

中图分类号：

学科分类号：

摘要：

We investigated the growth temperature dependence of luminescence properties in Eu-doped GaN layers grown by organometallic vapor phase epitaxy (OMVPE). The dominant photoluminescence (PL) peak intensity at 621 nm, due to the intra-4f shell transitions of 5Do-7F2 in Eu3+ ions, became the highest when the sample was grown at 10001. Above 1000°C, the PL peak intensity decreased because of the lower Eu concentration associated with the surface desorption of Eu ions. On the other hand, although the Eu concentration of the layer grown at 900"C was only half of the layer grown at 1000°C, the pronounced decline in the PL peak intensity was observed with decreasing growth temperature from 10001 to 900°C, which results from the modification of the local structure around Eu ions. These results indicate that the growth temperature strongly influences the Eu concentration and the local structure around Eu ions. Therefore, an optimized growth temperature exists for strong Eu-related luminescence from Eu-doped GaN layer grown by OMVPE. © 2010 The Society of Materials Science, Japan.

引用

页码：671 / 674

页数：3

共 11 条

[1]

Steckl A.J., Heikenfeld J.C., Lee D.-S., Garter M.J., Baker C.C., Wang Y., Jones R., Rare-earth-doped GaN: Growth, properties, and fabrication of electroluminescent devices, IEEE J. SeL Top. Quantum Electron, 8, 4, pp. 749-766, (2002)

[2]

Steck A.J., Park J.H., Zavada J.M., Prospects for rare earth doped GaN lasers on Si, Mater. Today, 10, 7-8, pp. 20-27, (2007)

[3]

Fujiwara Y., Terai Y., Nishikawa A., Present status and prospects of rare-earth-doped semiconductors, OYO BUTURI, 79, 1, pp. 25-31, (2010)

[4]

Heikenfeld J., Garter M., Lee D.S., Birkhahn R., Steckl A.J., Red light emission by photoluminescence and electroluminescence from Eu-doped GaN, Appl. Phys. Lett, 75, 9, pp. 1189-1191, (1999)

[5]

Morishima S., Maruyama T., Tanaka M., Masumoto Y., Akimoto K., Growth of Eu doped GaN and electroluminescence from MIS structure, Phys. Status Solidi A, 176, pp. 113-117, (1999)

[6]

Lozykowski H.J., Jadwisienczak W.M., Han J., Brown I.G., Luminescence properties of GaN and Al<sub>0.14</sub>Ga<sub>0.86</sub>N/ GaN superlattice doped with europium, Appl Phys. Lett, 77, 6, pp. 767-769, (2000)

[7]

Park J.H., Steckl A.J., Laser action in Eu-doped GaN thin-film cavity at room temperature, Appl. Phys. Lett, 85, pp. 4588-4590, (2004)

[8]

Nishikawa A., Kawasaki T., Furukawa N., Terai Y., Fujiwara Y., Room-temperature red emission from a p-type/ europium-doped/n-type gallium nitride light-emitting diode under current injection, Appl. Phys. Express, 2, 7, (2009)

[9]

Penn S.T., Fleischman Z., Dierolf V., Site-specific exci- Tation of Eu ions in GaN, Phys. Status Solidi A, 205, 1, pp. 30-33, (2008)

[10]

Fleischman Z., Munasinghe C., Steckl A.J., Wakahara A., Zavada J., Dierolf V., Excitation pathways and efficiency of Eu ions in GaN by site-selective spectroscopy, AppL Phys. B, 97, pp. 607-618, (2009)

← 1 2 →