Metamorphic in0.53Ga0.47as metal-oxide-semiconductor structure on a gaAs substrate with zro2 high-κ dielectrics

被引：0
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作者：
Kuo, Chien-I [1 ]
Chang, Edward Yi [3 ]
Hsu, Heng-Tung [2 ]
Chen, Chun-Chi [3 ]
Chang, Chia-Yuan [3 ]
机构：
[1] Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu, 30010, Taiwan
[2] Department of Communications Engineering, Yuan Ze University, Chungli, 32003, Taiwan
[3] National Nana Device Laboratories, Science-based Industrial Park, No. 26, Prosperity Road 1, Hsinchu, 30078, Taiwan
来源：
Japanese Journal of Applied Physics | 2008年 / 47卷 / 5 PART 1期
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摘要：
Journal article (JA)
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页码：3441 / 3443
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