Cathodoluminescence investigation of relaxed Si1-xGex layer and composition-graded SiGe layer

被引：0
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作者：
Sumitomo, Takamichi [1 ]
Kita, Haruki [1 ]
Matsumoto, Satoru [1 ]
机构：
[1] Department of Electronics and Electrical Engineering, Keio University, 1-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2007年 / 46卷 / 4 A期
关键词：
Strained Si grown on relaxed Si1-xGex and a stair like composition-graded Si1-xGex layer with Ge composition x of 0.15; 0.20; and 0.25 was investigated in detail as a function of annealing temperature by cathodoluminescence (CL) spectroscopy and atomic force microscopy. The D1 and D2 lines in CL spectra did not show a photon energy shift within the above Ge compositions. On the other hand; the D2 line showed a photon energy shift with the acceleration voltage; i.e; the depth from the surface; indicating the dependence of D2 line luminescence on the Ge compositions. The D1/D2 intensity ratio varied with the depth and it suggested that the amount ratio of dislocation type causing D1 and D2 changed with the depth. The D1/ D2 intensity ratio increased significantly at the annealing temperature of 1000°C in the composition-graded Si1-xGe x layer. Strained Si surface roughness became maximum at 800°C and then came down owing to strain relaxation. The annealing process at these temperatures causes strain relaxation due to generation and modification of dislocations in each layer. ©2007 The Japan Society of Applied Physics;
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页码：1463 / 1465
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