Preparation of SiC whiskers deposited by CVD process

被引：0

作者：

Meng, Fan-Tao ^{[1
,2
]}

Du, Shan-Yi ^{[1
]}

Zhang, Yu-Min ^{[1
]}

机构：

[1] Center for Composite Materials, Harbin Institute of Technology, Harbin 150001, China

[2] School of Materials Science and Engineering, Shandong University of Technology, Zibo 255049, China

来源：

Rengong Jingti Xuebao/Journal of Synthetic Crystals | 2010年 / 39卷 / SUPPL.期

关键词：

Crystal whiskers - Deposits - Scanning electron microscopy - Morphology - X ray diffraction - Silicon carbide;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

SiC whiskers were deposited on RB-SiC substrate in a hot-wall chemical vapor deposition furnace, using methyltrichloride silicane (MTS) as precursor gas, H2 as carrier gas and argon as dilute gas, at 1100°C and 1150°C respectively. The effects of deposition temperature and dilute gas on the morphology of deposits were studied. The morphologies and composition of the deposits were determined by scanning electron microscope (SEM) and X-ray diffraction (XRD) respectively. As a result, the deposits at 1100°C are composed of whiskers and the deposits at 1150°C are of whiskers and grains. The mean diameter of the whiskers increases with the rise of the temperature between 1100°C and 1150°C. With the addition of dilute gas, the number of the curly defects of whiskers at 1100°C and grains in the deposits at 1150°C decrease. The as-obtained whiskers at 1100°C are determined as β-SiC. Furthermore, the growing mechanism of the deposits and the reason of the variation of morphologies were explained theoretically.

引用

页码：131 / 134