Computer modeling of low pressure chemical-vapor-deposition

被引：0

作者：

Xu, Da-Wei ^{[1
]}

Li, Wei-Hua ^{[1
]}

Zhou, Zai-Fa ^{[1
]}

机构：

[1] Key Laboratory MEMS, Southeast University, Nanjing 210096, China

来源：

Dianzi Qijian/Journal of Electron Devices | 2006年 / 29卷 / 01期

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摘要：

A two precursor model was discussed. Depending on the discussion of transmission mechanism under low pressure and the reaction result of deposition, a LPCVD (low pressure chemical-vapor-deposition) model was got. This model is two dimensions. In order to have a better result, we consider intermediate products in this model which change Sc to the value of Runi/Rd. It is programmed by C++ and the string-algorithm, so it is easy to calculate. By using software we get a result very close to the experiment result.

引用

页码：241 / 243