Two-dimensional diffusion model as applied to the analysis of the diffusion process of charge carriers in the photosensitive film of HgCdTe IR FPA detectors

被引：0

作者：

Vishnyakov, A.V. ^{[1
]}

Stuchinsky, V.A. ^{[1
]}

Brunev, D.V. ^{[1
]}

Zverev, A.V. ^{[1
]}

Dvoretsky, S.A. ^{[1
]}

机构：

[1] Institute of Semiconductor Physics, Russian Academy of Science, Siberian Division, 13 Acad. Lavrent'ev Avenue, Novosibirsk,630090, Russia

来源：

Applied Physics | 2015年 / 01期

关键词：

Cadmium telluride - Mercury amalgams - Cadmium alloys - Charge carriers - Photosensitivity - II-VI semiconductors - Infrared detectors - Light sensitive materials - Semiconductor alloys;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A 2D diffusion model is proposed to analyze the diffusion of charge carriers in the photosensitive film (PF) of HgCdTe photovoltaic IR FPA detectors with a continuous (without mesa isolation of pixels) absorber layer. An analysis of the inaccuracies of the model in reproducing results of spot-scan experiments is given. The proposed model is shown capable of providing a good approximate description to spot-scan data with a realistic local diffusion-length value of charge carriers in the PF region under array diodes.

引用

页码：44 / 50