Mirror Surface Finishing of Silicon Wafer Edge Using Ultrasonic Assisted Fixed-Abrasive CMP (UF-CMP)

被引：1

作者：

Wu, Yongbo ^{[1
]}

Yang, Weiping ^{[2
]}

Fujimoto, Masakazu ^{[1
]}

Zhou, Libo ^{[3
]}

机构：

[1] Department of Machine Intelligence and Systems Engineering, Akita Prefectural University, Yurihonjo, Akita 015-0055

[2] Jiangxi Agricultural University, School of Engineering, Economic Development District, Nanchang

[3] Ibaraki University, School of Engineering, Hitachi, Ibaraki 316-8511

来源：

International Journal of Automation Technology | 2013年 / 7卷 / 06期

关键词：

Chemical reaction; Fixed-abrasive polishing; Si wafer edge; Surface roughness; Ultrasonic vibration;

D O I：

10.20965/ijat.2013.p0663

中图分类号：

学科分类号：

摘要：

This paper proposes a new method of using Ultrasonic Assisted fixed-abrasive CMP (UA-CMP) to treat silicon wafer edges. In this method, a disc-shaped pellet containing CeO2 abrasives is attached to the end face of an ultrasonic head. The head is elliptically vibrated at an ultrasonic frequency, rotated at a given speed, and pressed against the work-surface of a silicon wafer edge at a certain normal force. In so doing, a solid-state chemical reaction occurs between the CeO2 abrasives and the silicon to form amorphous Ce-O-Si, which is easily removed from the silicon by the mechanical action of the ultrasonic vibration and rotation of the pellet. An experimental apparatus is produced and its fundamental performance is confirmed experimentally. Subsequently, the optimal processing conditions are determined experimentally using the Taguchi method. A mirror edge surface of around Ra3nm with few defects is obtained repeatedly under the optimum conditions.

引用

页码：663 / 670

页数：7

共 15 条

[11] Kamiya S., Et al., Study on reaction mechanism of Si and pure CeO2 for chemical-mechanical-grinding process, Int. Conf. on Nano-manufacturing (nanoMan'2008), (2008)
[12] Zhou L., Et al., Defect-free fabrication for single crystal silicon substrate by chemo-mechanical grinding, Annals of the CIRP 2006-Manufacturing Technology, 15, pp. 313-316, (2006)
[13] Huang H., Et al., Characteristics of silicon substrates fabricated using nanogrinding and chemo-mechanical grinding, Materials Science and Engineering A, 479, pp. 373-379, (2008)
[14] Wu Y., Et al., Performance improvement of chemo-mechanical grinding in single crystal silicon machining by the assistance of elliptical ultrasonic vibration, Int. J. Abrasive Technology, 4, 2, pp. 117-131, (2011)
[15] Hoshino T., Et al., Mechanism of polishing of SiO2 films by CeO2 particles, J. Non-Crystalline Solids, 283, pp. 129-136, (2001)

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