Mirror Surface Finishing of Silicon Wafer Edge Using Ultrasonic Assisted Fixed-Abrasive CMP (UF-CMP)

被引：1
作者：
Wu, Yongbo [1 ]
Yang, Weiping [2 ]
Fujimoto, Masakazu [1 ]
Zhou, Libo [3 ]
机构：
[1] Department of Machine Intelligence and Systems Engineering, Akita Prefectural University, Yurihonjo, Akita 015-0055
[2] Jiangxi Agricultural University, School of Engineering, Economic Development District, Nanchang
[3] Ibaraki University, School of Engineering, Hitachi, Ibaraki 316-8511
来源：
International Journal of Automation Technology | 2013年 / 7卷 / 06期
关键词：
Chemical reaction; Fixed-abrasive polishing; Si wafer edge; Surface roughness; Ultrasonic vibration;
D O I：
10.20965/ijat.2013.p0663
中图分类号：
学科分类号：
摘要：
This paper proposes a new method of using Ultrasonic Assisted fixed-abrasive CMP (UA-CMP) to treat silicon wafer edges. In this method, a disc-shaped pellet containing CeO2 abrasives is attached to the end face of an ultrasonic head. The head is elliptically vibrated at an ultrasonic frequency, rotated at a given speed, and pressed against the work-surface of a silicon wafer edge at a certain normal force. In so doing, a solid-state chemical reaction occurs between the CeO2 abrasives and the silicon to form amorphous Ce-O-Si, which is easily removed from the silicon by the mechanical action of the ultrasonic vibration and rotation of the pellet. An experimental apparatus is produced and its fundamental performance is confirmed experimentally. Subsequently, the optimal processing conditions are determined experimentally using the Taguchi method. A mirror edge surface of around Ra3nm with few defects is obtained repeatedly under the optimum conditions.
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页码：663 / 670
页数：7
相关论文
共 15 条
  • [1] Semiconductor Fab/Equipment/Facilities, (2004)
  • [2] Narusawa M., Frontier of wafer edge evaluation and polishing, Electric J., 2, pp. 84-86, (2006)
  • [3] Yang W., Et al., A new approach to silicon wafer edge treatment by Ultrasonically Assisted Polishing (UAP), Int. J. Materials and Product Technology, 31, 2-3, pp. 159-175, (2008)
  • [4] Wu Y., Yang W., Fundamental investigation of silicon wafer edge treatment by ultrasonically assisted polishing (UAP), Int. J. Materials and Product Technology, 40, 3-4, pp. 264-276, (2011)
  • [5] Jones A.R., Hull J.B., Ultrasonic flow polishing, Ultrasonics, 36, pp. 97-101, (1998)
  • [6] Deng J., Lee T., Effect of ultrasonic surface finishing on the strength and thermal shock behavior of the EDMed ceramic composite, Int. J. of Machine Tools and Manufacture, 42, pp. 245-250, (2002)
  • [7] Hocheng H., Kuo K.L., Fundamental study of ultrasonic polishing of mold steel, Int. J. of Machine Tools and Manufacture, 42, pp. 7-13, (2002)
  • [8] Zhou L., Et al., Research on chemo mechanical grinding (CMG) of Si wafer (1st report), J. of Japanese Society for Precision Engineering, 68, 12, pp. 1559-1563, (2002)
  • [9] Zhou L., Et al., Development of chemo mechanical grinding (CMG) process, Proc. of Int. Conf. on LEM21, pp. 315-320, (2003)
  • [10] Tian Y.B., Et al., Elimination of surface scratch/texture on the surface of single crystal Si substrate in chemo-mechanical grinding (CMG) process, Applied Surface Science, 255, pp. 4205-4211, (2009)
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