Effect of the oxygen partial pressure on properties of indium gallium zinc oxide thin film transistors

被引：0

作者：

Liu, Yuan-Yuan ^{[1
]}

Tong, Yang ^{[1
]}

Wang, Xue-Xia ^{[1
]}

Wang, Kun-Lun ^{[1
]}

Song, Shu-Mei ^{[1
]}

Yang, Tian-Lin ^{[1
]}

机构：

[1] School of Space Science and Physics, Shandong University at Weihai, Weihai, China

来源：

Rengong Jingti Xuebao/Journal of Synthetic Crystals | 2014年 / 43卷 / 12期

关键词：

Amorphous semiconductors - Partial pressure - Zinc oxide - Gallium compounds - Energy gap - II-VI semiconductors - Semiconducting indium compounds - Thin film circuits - Thin films - Pressure effects - Magnetron sputtering - Oxygen - Amorphous films;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The indium gallium zinc oxide thin film transistors (IGZO TFTs) with different oxygen partial pressure were fabricated on p-Si substrate by RF magnetron sputtering at room temperature. The results indicate that the IGZO thin films are amorphous at different oxygen partial pressure; the optical gap increases firstly and then decreases latter as the oxygen partial pressure increasing; the field effect mobility of IGZO TFTs increases first and then decreases, the device convert to enhancement from depletion mode. IGZO TFTs exhibit good electrical properties with field effect mobility of 4.44 cm2/V·s, subthreshold swing of 2.1 V/decade and Ion/Ioff ratio of over 105 when the oxygen partial pressure is 7.47%. ©, 2014, Chinese Ceramic Society. All right reserved.

引用

页码：3108 / 3112