Impact of film thickness on properties of Ti-Ga Co-doped ZnO films

被引：0
|
作者：
Liu H. [1 ]
Zhang H. [1 ]
Wang Z. [1 ]
机构：
[1] School of Science, Shandong University of Technology
来源：
Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology | 2011年 / 31卷 / 02期
关键词：
Magnetron sputtering; Thickness; Ti-Ga Co-doped zinc oxide films; Transparent conducting films;
D O I：
10.3969/j.issn.1672-7126.2011.02.12
中图分类号：
学科分类号：
摘要：
The Ti-Ga Co-doped ZnO(TGZO) films were deposited by DC magnetron sputtering at room temperature, on water-cooled glass substrates. The impacts of the growth conditions, including the film thickness, deposition rate, Ti and Ga contents, and deposition rates, on the electrical and optical properties of the ZnO films were studied. The microstructures were characterized with X-ray diffraction and scanning electron microscopy. The results show that the film thickness strongly affects the electrical and optical properties of the wurtzite phased ZnO films. For instance, at a thickness of 628 nm, the lowest resistivity was found to be 2.01 × 104 Ω · cm, and its average transmittance reached 91% in the visible light range. We suggest that the TGZO films be a good material in fabrication of solar cells and liquid crystal displays.
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页码：183 / 186
页数：3
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